USD
RUB
0
Курс ЦБ на 12.07.2026
$76,66
€87,67
0

ISSI IS46TR16256A-125KBLA2

артикул IS46TR16256A-125KBLA2
ISSI
производитель
DRAM Chip DDR3 SDRAM 4Gbit 256Mx16 1.5V Automotive 96-Pin TW-BGA
Datasheet PDF | 4 мб
Отсортировать цены
по количеству
По данному товару предложений не найдено. Оставьте заявку, и мы вам перезвоним.
Отправить запрос
Технические параметры
EU RoHS
Compliant
ECCN (US)
EAR99
Part Status
Obsolete
HTS
8542.32.00.24
Automotive
Yes
PPAP
Yes
DRAM Type
DDR3 SDRAM
Chip Density (bit)
4G
Organization
256Mx16
Number of Internal Banks
8
Number of Words per Bank
32M
Number of Bits/Word (bit)
16
Data Bus Width (bit)
16
Maximum Clock Rate (MHz)
1600
Maximum Access Time (ns)
0.225
Address Bus Width (bit)
18
Minimum Operating Supply Voltage (V)
1.425
Typical Operating Supply Voltage (V)
1.5
Maximum Operating Supply Voltage (V)
1.575
Operating Current (mA)
220
Minimum Operating Temperature (В°C)
-40
Maximum Operating Temperature (В°C)
105
Supplier Temperature Grade
Automotive
Number of I/O Lines (bit)
16
Supplier Package
TW-BGA
Pin Count
96
Standard Package Name
BGA
Mounting
Surface Mount
Package Height
1(Max)
Package Length
13
Package Width
9
PCB changed
96
Lead Shape
Ball
Описание

Surface Mount Tray 256MX16 SDRAM - DDR3 ic memory 800MHz 20ns 13mm 290mA

DRAM Chip DDR3 SDRAM 4Gbit 256Mx16 1.5V Automotive 96-Pin TW-BGA

Automotive (Tc: -40 To +105C), 4G, 1.5V, Ddr3, 256Mx16, 1600Mt/s @ 11-11-11, 96 Ball Bga (9Mm X13Mm) Rohs

DDR SDRAM, 256Mx16, 1.5V, 8K, BGA-96,RoHS

IC DRAM 4GBIT PARALLEL 96TWBGA

DRAM 4G, 1.5V, 1600MT/s DDR3 SDRAM

MOSFET N/P-CH 30V 8A/12A TO252-4

Похожие товары
ISSI
DRAM Chip DDR3 SDRAM 4Gbit 256Mx16 1.5V 96-Pin TW-BGA
ISSI
DRAM Chip DDR3 SDRAM 4Gbit 256Mx16 1.5V 96-Pin TW-BGA
ISSI
DRAM Chip DDR3L SDRAM 4Gbit 256Mx16 1.35V 96-Pin TW-BGA