Курс ЦБ на 15.01.2026
$78,57
€92,2
Vishay SI1967DH-T1-E3
артикул SI1967DH-T1-E3
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Технические параметры
EU RoHS
Compliant
ECCN (US)
EAR99
Part Status
Active
HTS
8541.21.00.95
Automotive
No
PPAP
No
Category
Power MOSFET
Configuration
Dual
Process Technology
TrenchFET
Channel Mode
Enhancement
Channel Type
P
Number of Elements per Chip
2
Maximum Drain Source Voltage (V)
20
Maximum Gate Source Voltage (V)
В±8
Maximum Gate Threshold Voltage (V)
1
Operating Junction Temperature (В°C)
-55 to 150
Maximum Continuous Drain Current (A)
1.3
Maximum Gate Source Leakage Current (nA)
100
Maximum IDSS (uA)
1
Maximum Drain Source Resistance (mOhm)
490@4.5V
Typical Gate Charge @ Vgs (nC)
2.6@8V; 1.6@4.5V
Typical Gate to Drain Charge (nC)
0.33
Typical Gate to Source Charge (nC)
0.36
Typical Reverse Recovery Charge (nC)
15
Typical Input Capacitance @ Vds (pF)
110@10V
Typical Reverse Transfer Capacitance @ Vds (pF)
16@10V
Minimum Gate Threshold Voltage (V)
0.4
Typical Output Capacitance (pF)
26
Maximum Power Dissipation (mW)
740
Typical Fall Time (ns)
10
Typical Rise Time (ns)
27
Typical Turn-Off Delay Time (ns)
15
Typical Turn-On Delay Time (ns)
12
Minimum Operating Temperature (В°C)
-55
Maximum Operating Temperature (В°C)
150
Packaging
Tape and Reel
Maximum Power Dissipation on PCB @ TC=25В°C (W)
0.74
Maximum Pulsed Drain Current @ TC=25В°C (A)
3
Maximum Junction Ambient Thermal Resistance on PCB (В°C/W)
220
Typical Diode Forward Voltage (V)
0.8
Typical Gate Plateau Voltage (V)
1.8
Typical Reverse Recovery Time (ns)
25
Maximum Diode Forward Voltage (V)
1.2
Maximum Positive Gate Source Voltage (V)
8
Maximum Continuous Drain Current on PCB @ TC=25В°C (A)
1
Supplier Package
SC-70
Pin Count
6
Standard Package Name
SC
Mounting
Surface Mount
Package Height
1(Max)
Package Length
2
Package Width
1.25
PCB changed
6
Lead Shape
Gull-wing
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Описание
Amplify electronic signals and switch between them with the help of Vishay&s;s SI1967DH-T1-E3 power MOSFET. Its maximum power dissipation is 740 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This MOSFET transistor has a minimum operating temperature of -55 В°C and a maximum of 150 В°C. This P channel MOSFET transistor operates in enhancement mode.
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