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ISSI IS42S16100H-7BLI-TR

артикул IS42S16100H-7BLI-TR
ISSI
производитель
DRAM Chip SDRAM 16Mbit 1Mx16 3.3V 60-Pin TFBGA T/R
Datasheet PDF | 2 мб
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Технические параметры
EU RoHS
Compliant
ECCN (US)
EAR99
Part Status
Active
HTS
8542.32.00.02
Automotive
No
PPAP
No
DRAM Type
SDRAM
Chip Density (bit)
16M
Organization
1Mx16
Number of Internal Banks
2
Number of Words per Bank
512K
Number of Bits/Word (bit)
16
Data Bus Width (bit)
16
Maximum Clock Rate (MHz)
143
Maximum Access Time (ns)
6; 5.5
Address Bus Width (bit)
12
Interface Type
LVTTL
Minimum Operating Supply Voltage (V)
3
Typical Operating Supply Voltage (V)
3.3
Maximum Operating Supply Voltage (V)
3.6
Operating Current (mA)
70
Minimum Operating Temperature (В°C)
-40
Maximum Operating Temperature (В°C)
85
Supplier Temperature Grade
Industrial
Number of I/O Lines (bit)
16
Packaging
Tape and Reel
Supplier Package
TFBGA
Pin Count
60
Standard Package Name
BGA
Mounting
Surface Mount
Package Height
0.85(Max)
Package Length
10.1
Package Width
6.4
PCB changed
60
Lead Shape
Ball
Описание

Active Volatile ROHS3Compliant Parallel ic memory -40C~85C TA 3V~3.6V 16Mb 1M x 16 5.5ns

SDRAM, 16MBIT, 143MHZ, BGA-60; DRAM Memory Configuration: 1M x 16bit; Memory Case Style: BGA; No. of Pins: 60Pins; IC Interface Type: Parallel; Access Time: 5.5ns; Page Size: -; Operating Temperature Min: -40°C; Operating Temperature Max: 85°C; Product Range: -; MSL: MSL 3 - 168 hours; SVHC: No SVHC (15-Jan-2018)

16M, 3.3V, Sdram, 1Mx16, 143Mhz, 60 Ball Bga (6.4Mm X 10.1Mm) Rohs, It, T&r |Integrated Silicon Solution (Issi) IS42S16100H-7BLI-TR

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