USD
RUB
0
Курс ЦБ на 12.06.2026
$71,91
€82,97
0

ISSI IS43R32400E-5BLI

артикул IS43R32400E-5BLI
ISSI
производитель
DRAM Chip DDR SDRAM 128Mbit 4Mx32 2.5V 144-Pin LFBGA
Datasheet PDF | 1 мб
Отсортировать цены
по количеству
По данному товару предложений не найдено. Оставьте заявку, и мы вам перезвоним.
Отправить запрос
Технические параметры
EU RoHS
Compliant
ECCN (US)
EAR99
Part Status
Active
HTS
8542.32.00.02
Automotive
No
PPAP
No
DRAM Type
DDR SDRAM
Chip Density (bit)
128M
Organization
4Mx32
Number of Internal Banks
4
Number of Words per Bank
1M
Number of Bits/Word (bit)
32
Data Bus Width (bit)
32
Maximum Clock Rate (MHz)
200
Maximum Access Time (ns)
0.7
Address Bus Width (bit)
14
Interface Type
SSTL_2
Minimum Operating Supply Voltage (V)
2.3
Typical Operating Supply Voltage (V)
2.5
Maximum Operating Supply Voltage (V)
2.7
Operating Current (mA)
240
Minimum Operating Temperature (В°C)
-40
Maximum Operating Temperature (В°C)
85
Supplier Temperature Grade
Industrial
Number of I/O Lines (bit)
32
Supplier Package
LFBGA
Pin Count
144
Standard Package Name
BGA
Mounting
Surface Mount
Package Height
1.02(Max)
Package Length
12
Package Width
12
PCB changed
144
Lead Shape
Ball
Описание

DRAM Chip DDR SDRAM 128M-Bit 4M x 32 2.5V 144-Pin LFBGA

DDR SDRAM, 4Mx32, 2.5V, 4K, BGA-144,RoHS

LFBGA-144(12x12) DDR SDRAM ROHS

IC DRAM 128M PARALLEL 144LFBGA

DRAM 128M (4Mx32) 200MHz 2.5v DDR SDRAM

128M, 2.5V, Ddr, 4Mx32, 200Mhz @ Cl3, 144-Ball Bga (12Mm X 12Mm) Rohs, It |Integrated Silicon Solution (Issi) IS43R32400E-5BLI

Похожие товары
Renesas
3.3V 128K x 36 Synchronous PipeLined Burst SRAM w/3.3V I/O
Renesas
3.3V 128K x 36 Synchronous Flow-Through SRAM w/3.3V I/O
ISSI
SRAM Chip Sync Quad 3.3V 9M-Bit 256K x 36 3.1ns 165-Pin BGA
ISSI
DRAM Chip DDR SDRAM 256Mbit 8Mx32 2.5V 144-Pin LFBGA
Micron
DRAM Chip LPDDR2 SDRAM 512M-Bit 16Mx32 1.2V/1.8V 168-Pin WFBGA T/R