Diode, Infrared Emitter; TO-46; 935 nm; 1.7 V; 100 mA; -55 degC; 125 degC; 150
Infrared Emitting Diode; Peak Wavelength:935nm; Power Dissipation, Pd:150mW; Forward Current:100mA; Forward Voltage:1.7V; Viewing Angle:20°; Package/Case:T0-46; Leaded Process Compatible:Yes ;RoHS Compliant: Yes
INFRARED EMITTING DIODES; Peak Wavelengt; INFRARED EMITTING DIODES; Peak Wavelength:935nm; Forward Current If(AV):100mA; Rise Time:700ns; Fall Time tf:700ns; Viewing Angle:20°; Forward Voltage VF Max:1.7V; Operating Temperature Min:-55°C; Operating Temperature Max:125°C
SE5455 Series GaAs Infrared Emitting Diode, TO-46 Metal Can The SE3455/5455 series consists of a gallium arsenide infrared emitting diode mounted in a TO-46 metal can package. The SE3455 series has flat window cans providing a wide beam angle, while the SE5455 series has glass lensed cans providing a narrow beam angle. These devices are constructed with dual bond wires suitable for pulsed current applications. The TO-46 packages offer high power dissipation capability and are ideally suited for operation in hostile environments.