3.77 mm, 1 ELEMENT, INFRARED INVERT GATE, SOIC14 IR Emitting Diode; Peak Wavelength:935nm; Power Dissipation, Pd:150mW; Forward Current:100mA; Forward Voltage:1.7V; Viewing Angle:20°; Package/Case:2-TO-46; LED Color:Infrared; Mounting Type:Through Hole ;RoHS Compliant: Yes IR EMITTER, 935NM, 4.7MM, TO-46-2, THD;; IR EMITTER, 935NM, 4.7MM, TO-46-2, THD; Peak Wavelength:935nm; Forward Current If(AV):100mA; Rise Time:700ns; Fall Time tf:700ns; Viewing Angle:20°; Forward Voltage VF Max:1.7V; Operating Temperature Min:-55°C; Diode Case Style:TO-46 SE5455 Series GaAs Infrared Emitting Diode, TO-46 Metal Can The SE3455/5455 series consists of a gallium arsenide infrared emitting diode mounted in a TO-46 metal can package. The SE3455 series has flat window cans providing a wide beam angle, while the SE5455 series has glass lensed cans providing a narrow beam angle. These devices are constructed with dual bond wires suitable for pulsed current applications. The TO-46 packages offer high power dissipation capability and are ideally suited for operation in hostile environments.