Курс ЦБ на 07.03.2026
$79,15
€91,84
ISSI IS66WVE4M16EALL-70BLI
артикул IS66WVE4M16EALL-70BLI
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Технические параметры
EU RoHS
Compliant
ECCN (US)
EAR99
Part Status
Active
HTS
8542.32.00.61
Automotive
No
PPAP
No
Chip Density (bit)
64M
Number of Words
4M
Number of Bits/Word (bit)
16
Address Bus Width (bit)
22
Number of Ports
1
Timing Type
Asynchronous
Maximum Access Time (ns)
70
Process Technology
CMOS
Minimum Operating Supply Voltage (V)
1.7
Typical Operating Supply Voltage (V)
1.8
Maximum Operating Supply Voltage (V)
1.95
Maximum Operating Supply Current (mA)
30
Minimum Operating Temperature (В°C)
-40
Maximum Operating Temperature (В°C)
85
Supplier Temperature Grade
Industrial
Supplier Package
TFBGA
Pin Count
48
Standard Package Name
BGA
Mounting
Surface Mount
Package Height
0.9(Max)
Package Length
8
Package Width
6
PCB changed
48
Lead Shape
Ball
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Описание
Active 3-STATE BOTTOM Volatile PSRAM Memory -40C~85C TA 1.7V 67108864bit 0.00015A
Cellular RAM Pseudo SRAM, 4Mx16, 1.7 to 1.95V, 70ns, TFBGA-48
64Mb,pseudo Sram,asynch/Page, 4M X 16,70Ns,vdd 1.7V1.95V, Vddq 1.7V1.95V,48 Ball Bga (6X8 Mm), Rohs |Integrated Silicon Solution (Issi) IS66WVE4M16EALL-70BLI
PSRAM, 64MBIT, 70NS, TFBGA-48; Memory Size: 64Mbit; SRAM Memory Configuration: 4M x 16bit; Supply Voltage Range: 1.7V to 1.95V; Memory Case Style: TFBGA; No. of Pins: 48Pins; Access Time: 70ns; Operating Temperature Min: -40°C; Operating Temperature Max: 85°C; Product Range: -; Automotive Qualification Standard: -; RoHS Phthalates Compliant: Yes; MSL: MSL 3 - 168 hours; SVHC: No SVHC (15-Jan-2018)
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