Курс ЦБ на 14.07.2026
$76,62
€87,58
onsemi FJV4104RMTF
артикул FJV4104RMTF
onsemi
производитель
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon
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Технические параметры
Technical
Collector Base Voltage (VCBO)
-50 V
Collector Emitter Breakdown Voltage
50 V
Collector Emitter Voltage (VCEO)
50 V
Continuous Collector Current
-100 mA
Current Rating
-100 mA
Element Configuration
Single
Emitter Base Voltage (VEBO)
-10 V
hFE Min
68
Max Breakdown Voltage
50 V
Max Collector Current
100 mA
Max Operating Temperature
150 °C
Max Power Dissipation
200 mW
Min Operating Temperature
-55 °C
Polarity
PNP
Power Dissipation
200 mW
Transition Frequency
200 MHz
Voltage Rating (DC)
-50 V
Physical
Case/Package
SOT-23-3
Mount
Surface Mount
Number of Pins
3
Weight
30 mg
Compliance
Lead Free
Lead Free
RoHS
Compliant
Supply Chain
Lifecycle Status
Obsolete (Last Updated: 4 days ago)
Manufacturer Lifecycle Status
OBSOLETE (Last Updated: 4 days ago)
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Описание
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon
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