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Курс ЦБ на 05.10.2026
$83,48
€94,32
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onsemi FJV3103RMTF

артикул FJV3103RMTF
onsemi
производитель
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
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Технические параметры
Technical
Collector Base Voltage (VCBO)
50 V
Collector Emitter Breakdown Voltage
50 V
Collector Emitter Saturation Voltage
300 mV
Collector Emitter Voltage (VCEO)
50 V
Continuous Collector Current
100 mA
Current Rating
100 mA
Element Configuration
Single
Emitter Base Voltage (VEBO)
10 V
hFE Min
56
Max Breakdown Voltage
50 V
Max Collector Current
100 mA
Max Operating Temperature
150 °C
Max Power Dissipation
200 mW
Min Operating Temperature
-55 °C
Packaging
Digi-Reel®
Polarity
NPN
Power Dissipation
200 mW
Transition Frequency
250 MHz
Voltage Rating (DC)
50 V
Physical
Case/Package
SOT-23-3
Mount
Surface Mount
Number of Pins
3
Weight
30 mg
Dimensions
Height
930 µm
Length
2.92 mm
Width
1.3 mm
Compliance
Lead Free
Lead Free
Radiation Hardening
No
RoHS
Compliant
Supply Chain
Lifecycle Status
Obsolete (Last Updated: 4 days ago)
Manufacturer Lifecycle Status
OBSOLETE (Last Updated: 4 days ago)
Описание

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon

Trans Digital BJT NPN 50V 100mA 3-Pin SOT-23 T/R - Tape and Reel

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NPN Epitaxial Silicon Transistor Product Highlights: Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=22KW, R2=22KW) Complement to FJV4103R

Transistors with built-in resistors can be excellent space- and cost-saving solutions by reducing component count and simplifying circuit design.

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