Курс ЦБ на 19.07.2025
$78,31
€91,08
ГлавнаяКаталогDiodes, Transistors and ThyristorsBipolar TransistorsRF BJTNXP Semiconductors BFU530AR
NXP Semiconductors BFU530AR
артикул BFU530AR
NXP Semiconductors
производитель
Trans RF BJT NPN 16V 0.065A 450mW Automotive 3-Pin TO-236AB T/R
Datasheet
PDF | 332 кб
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Технические параметры
EU RoHS
Compliant
ECCN (US)
EAR99
Part Status
Active
HTS
8541.29.00.95
SVHC
Yes
Automotive
Yes
PPAP
Unknown
Type
NPN
Material
Si
Configuration
Single
Number of Elements per Chip
1
Maximum Collector Base Voltage (V)
30
Maximum Collector-Emitter Voltage (V)
16
Maximum Collector-Emitter Voltage Range (V)
&l;20
Maximum Emitter Base Voltage (V)
3
Maximum DC Collector Current (A)
0.065
Maximum DC Collector Current Range (A)
0.06 to 0.12
Maximum Collector Cut-Off Current (nA)
1(Typ)
Operational Bias Conditions
8V/15mA
Minimum DC Current Gain
60@10mA@8V
Minimum DC Current Gain Range
50 to 120
Typical Input Capacitance (pF)
0.83
Typical Output Capacitance (pF)
0.67
Maximum Power Dissipation (mW)
450
Maximum Power 1dB Compression (dBm)
10.5(Typ)
Typical Power Gain (dB)
23.5
Maximum 3rd Order Intercept Point (dBm)
20(Typ)
Maximum Transition Frequency (MHz)
11000(Typ)
Maximum Noise Figure (dB)
1.1(Min)
Minimum Operating Temperature (В°C)
-40
Maximum Operating Temperature (В°C)
150
Packaging
Tape and Reel
Pin Count
3
Standard Package Name
SOT
Supplier Package
TO-236AB
Mounting
Surface Mount
Package Height
1(Max)
Package Length
3(Max)
Package Width
1.4(Max)
PCB changed
3
Lead Shape
Gull-wing
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Описание
The BFU530AR RF amplifier from NXP Semiconductors can provide you an alternative to traditional BJTs in that it can work with higher radio frequencies. This RF transistor has a minimum operating temperature of -40 В°C and a maximum of 150 В°C.
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