Nexperia PDTC114ET,215
Transistor NPN - Pre-Biased, SOT-23 (TO-236AB) 50V 100mA250mW Surface Mount
PDTC114ET - 50 V, 100 mA NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = 10 kΩ
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
Trans Digital BJT NPN 50V 100mA 250mW Automotive 3-Pin TO-236AB T/R
NPN - Pre-Biased 250mW 100mA 50V SOT-23(SOT-23-3) Digital Transistors ROHS
100 mA 50 V NPN Si SMALL SIGNAL TRANSISTOR TO-236AB
Transistors - Bipolar (BJT) - Single, Pre-Biased 1 (Unlimited) Tape & Reel (TR) TO-236-3, SC-59, SOT-23-3 NPN - Pre-Biased Surface Mount 30 @ 5mA 5V 150mV @ 500μA, 10mA 10 k Ω 1μA TRANS PREBIAS NPN 250MW TO236AB
Brt, Npn, 50V, 100Ma, 10Kohm / 10Kohm, 3-Sot-23, Full Reel; Transistor Polarity:single Npn; Collector Emitter Voltage Max Npn:50V; Collector Emitter Voltage Max Pnp:-; Continuous Collector Current:100Ma; Base Input Resistor R1:10Kohmrohs Compliant: Yes
TRANSISTOR, DIGITAL, SOT-23; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:10kohm; Base-Emitter Resistor R2:10kohm; Resistor Ratio, R1 / R2:1; RF Transistor Case:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2013); MSL:-
Transistor Polarity = NPN / Configuration = Single / Continuous Collector Current (Ic) mA = 100 / DC Current Gain (hFE) = 30 / Power Dissipation (Pd) mW = 250 / Typical Input Resistor kOhm = 10 / Typical Resistor Ratio kOhm = 1 / Collector-Base Voltage (Vcbo) V = 50 / Collector-Emitter Voltage (Vceo) V = 50 / Emitter-Base Voltage (Vebo) V = 10 / Operating Temperature Max. °C = 150 / Operating Temperature Min. °C = -65 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Collector Emitter Saturation Voltage Max. (Vce(sat)) mV = 100 / Operating Frequency MHz = 230
