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Курс ЦБ на 19.07.2025
$78,31
€91,08

Nexperia PDTC114EU,115

артикул PDTC114EU,115
Nexperia
производитель
Trans Digital BJT NPN 50V 100mA 200mW Automotive 3-Pin SC-70 T/R
Datasheet PDF | 1 мб
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Технические параметры
EU RoHS
Compliant
ECCN (US)
EAR99
Part Status
Active
HTS
8541.21.00.75
SVHC
Yes
Automotive
Yes
PPAP
Unknown
Type
NPN
Configuration
Single
Maximum Collector-Emitter Voltage (V)
50
Maximum Continuous DC Collector Current (mA)
100
Minimum DC Current Gain
30@5mA@5V
Typical Input Resistor (kOhm)
10
Typical Resistor Ratio
1
Maximum Collector-Emitter Saturation Voltage (V)
0.15@0.5mA@10mA
Maximum Power Dissipation (mW)
200
Minimum Operating Temperature (В°C)
-65
Maximum Operating Temperature (В°C)
150
Supplier Temperature Grade
Automotive
Packaging
Tape and Reel
Supplier Package
SC-70
Pin Count
3
Mounting
Surface Mount
Package Height
1(Max)
Package Length
2.2(Max)
Package Width
1.35(Max)
PCB changed
3
Описание

Trans Digital BJT NPN 50V 100mA 200mW Automotive 3-Pin SC-70 T/R

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon

PDTC114EU Series 50 V 100 mA SMT NPN Resistor-Equipped Transistor - SOT-323

PDTC114EU - NPN resistor-equipped transistors; R1 = 10 kΩ, R2 = 10 kΩ

NPN - Pre-Biased 200mW 100mA 50V SOT-323(SC-70) Digital Transistors ROHS

TRANSISTOR, DIGITAL, SOT-323; Digital Transistor Polarity: Single NPN; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 10kohm; Base-Emitter Resistor R2: 10kohm; Resistor Ratio, R1 / R2: -; RF Transistor Case: SOT-323; No. of Pins: 3 Pin; Product Range: PDTC114E Series; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on): 150mV; Continuous Collector Current Ic Max: 100mA; Current Ic Continuous a Max: 100mA; Current Ic hFE: 5mA; DC Collector Current: 100mA; DC Current Gain hFE: 30hFE; Full Power Rating Temperature: 25°C; Hfe Min: 30; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to +150°C; Power Dissipation Pd: 200mW; Power Dissipation Ptot Max: 200mW; Resistance R1: 10kohm; Resistance R2: 10kohm; Transistor Case Style: SOT-323; Transistor Polarity: NPN; Transistor Type: Bias Resistor (BRT); Transition Frequency ft: 230MHz

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