Nexperia PDTC123JU,115
PDTC123JU - 50 V, 100 mA NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 47 kΩ
Trans Digital BJT NPN 50V 100mA 200mW Automotive 3-Pin SC-70 T/R
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
PDTC123J series - NPN resistor-equipped transistors; R1 = 2.2 kO, R2 = 47 kO
BRT TRANSISTOR, NPN, 50V, 100MA, 2.2KOHM / 47KOHM, 3-SOT-323; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:2.2kohm; Base-Emitter Resistor R2:47kohm; Resistor Ratio, R1 / R2:21 ;RoHS Compliant: Yes
TRANSISTOR, DIGITAL, SOT-323; Digital Transistor Polarity: Single NPN; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 2.2kohm; Base-Emitter Resistor R2: 47kohm; Resistor Ratio, R1 / R2: -; RF Transistor Case: SOT-323; No. of Pins: 3 Pin; Product Range: PDTC123J Series; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on): 100mV; Continuous Collector Current Ic Max: 100mA; Current Ic Continuous a Max: 100mA; Current Ic hFE: 10mA; DC Collector Current: 100mA; DC Current Gain hFE: 100hFE; Full Power Rating Temperature: 25°C; Hfe Min: 100; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to +150°C; Power Dissipation Pd: 200mW; Power Dissipation Ptot Max: 200mW; Resistance R1: 2.2kohm; Resistance R2: 47kohm; Transistor Case Style: SOT-323; Transistor Polarity: NPN; Transistor Type: Bias Resistor (BRT); Transition Frequency ft: 230MHz
