Курс ЦБ на 18.07.2025
$78,19
€90,97
ГлавнаяКаталогDiodes, Transistors and ThyristorsBipolar TransistorsDigital BJTNexperia PDTD113ZT,215
Nexperia PDTD113ZT,215
артикул PDTD113ZT,215
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Технические параметры
EU RoHS
Compliant
ECCN (US)
EAR99
Part Status
Active
HTS
8541.29.00.95
SVHC
Yes
Automotive
Yes
PPAP
Unknown
Type
NPN
Configuration
Single
Maximum Collector-Emitter Voltage (V)
50
Maximum Continuous DC Collector Current (mA)
500
Minimum DC Current Gain
70@50mA@5V
Typical Input Resistor (kOhm)
1
Typical Resistor Ratio
0.1
Maximum Collector-Emitter Saturation Voltage (V)
0.3@2.5mA@50mA
Maximum Power Dissipation (mW)
250
Minimum Operating Temperature (В°C)
-65
Maximum Operating Temperature (В°C)
150
Supplier Temperature Grade
Automotive
Packaging
Tape and Reel
Supplier Package
SOT-23
Pin Count
3
Standard Package Name
SOT
Mounting
Surface Mount
Package Height
1(Max)
Package Length
3(Max)
Package Width
1.4(Max)
PCB changed
3
Lead Shape
Gull-wing
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Описание
PDTD113ZT - 50 V, 500 mA NPN resistor-equipped transistor; R1 = 1 kΩ, R2 = 10 kΩ
Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
Trans Digital BJT NPN 50V 500mA 250mW Automotive 3-Pin SOT-23 T/R
NPN - Pre-Biased 250mW 500mA 50V SOT-23(SOT-23-3) Digital Transistors ROHS
BRT TRANSISTOR, NPN, 50V, 500MA, 1KOHM / 10KOHM, 3-SOT-23; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:500mA; Base Input Resistor R1:1kohm; Base-Emitter Resistor R2:10kohm; Resistor Ratio, R1 / R2:10 ;RoHS Compliant: Yes
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