Курс ЦБ на 19.07.2025
$78,31
€91,08
ГлавнаяКаталогDiodes, Transistors and ThyristorsBipolar TransistorsRF BJTNXP Semiconductors BFU790F,115
NXP Semiconductors BFU790F,115
артикул BFU790F,115
NXP Semiconductors
производитель
Trans RF BJT NPN 2.8V 0.1A 234mW 4-Pin DFP T/R
Datasheet
PDF | 116 кб
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Технические параметры
EU RoHS
Compliant
ECCN (US)
EAR99
Part Status
Active
HTS
8541.21.00.75
SVHC
Yes
Automotive
No
PPAP
No
Type
NPN
Material
SiGe
Configuration
Single Dual Emitter
Number of Elements per Chip
1
Maximum Collector Base Voltage (V)
10
Maximum Collector-Emitter Voltage (V)
2.8
Maximum Collector-Emitter Voltage Range (V)
&l;20
Maximum Emitter Base Voltage (V)
1
Maximum DC Collector Current (A)
0.1
Maximum DC Collector Current Range (A)
0.06 to 0.12
Maximum Collector Cut-Off Current (nA)
100
Operational Bias Conditions
2.5V/85mA
Minimum DC Current Gain
235@10mA@2V
Minimum DC Current Gain Range
200 to 300
Typical Input Capacitance (pF)
2.817
Typical Output Capacitance (pF)
0.527
Maximum Power Dissipation (mW)
234
Maximum Power 1dB Compression (dBm)
20(Typ)
Typical Power Gain (dB)
21
Maximum 3rd Order Intercept Point (dBm)
34(Typ)
Maximum Transition Frequency (MHz)
25000(Typ)
Maximum Noise Figure (dB)
0.5(Typ)
Minimum Operating Temperature (В°C)
-65
Maximum Operating Temperature (В°C)
150
Packaging
Tape and Reel
Supplier Package
DFP
Pin Count
4
Standard Package Name
DFP
Mounting
Surface Mount
Package Height
0.75(Max)
Package Length
2.2(Max)
Package Width
1.35(Max)
PCB changed
4
Lead Shape
Flat
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Описание
Are you looking for a component that can handle high power radio frequencies? NXP Semiconductors&s; BFU790F,115 RF amplifier is your solution. This RF transistor has a minimum operating temperature of -65 В°C and a maximum of 150 В°C.
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