Курс ЦБ на 17.04.2026
$76,09
€89,41
ГлавнаяКаталогDiodes, Transistors and ThyristorsBipolar TransistorsGP BJTNXP Semiconductors BFG540W/X,115
NXP Semiconductors BFG540W/X,115
артикул BFG540W/X,115
NXP Semiconductors
производитель
Trans RF BJT NPN 15V 0.12A 500mW 4-Pin(3+Tab) CMPAK T/R
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Технические параметры
Technical
Collector Base Voltage (VCBO)
20 V
Collector Emitter Breakdown Voltage
15 V
Collector Emitter Voltage (VCEO)
15 V
Continuous Collector Current
120 mA
Element Configuration
Single
Emitter Base Voltage (VEBO)
2.5 V
Frequency
9 GHz
Gain Bandwidth Product
9 GHz
Max Breakdown Voltage
15 V
Max Collector Current
120 mA
Max Operating Temperature
175 °C
Max Power Dissipation
500 mW
Min Operating Temperature
-65 °C
Number of Elements
1
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
500 mW
Transition Frequency
9 GHz
Physical
Case/Package
SOT-343
Contact Plating
Tin
Mount
Surface Mount
Number of Pins
4
Dimensions
Height
1 mm
Length
2.2 mm
Width
1.35 mm
Compliance
Radiation Hardening
No
RoHS
Compliant
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Описание
Trans RF BJT NPN 15V 0.12A 500mW 4-Pin(3+Tab) CMPAK T/R
RF WIDEBAND TRANSISTOR, NPN, 15V, 9GHZ, 4-SOT-343R
RF WIDEBAND TRANSISTOR, NPN, 15V, 9GHZ, 4-SOT-343R; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:15V; Transition Frequency Typ ft:9GHz; Power Dissipation Pd:500mW; DC Collector Current:120mA; DC Current Gain hFE:120
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