Курс ЦБ на 18.07.2025
$78,19
€90,97
ГлавнаяКаталогDiodes, Transistors and ThyristorsBipolar TransistorsRF BJTNXP Semiconductors BFR93A,215
NXP Semiconductors BFR93A,215
артикул BFR93A,215
NXP Semiconductors
производитель
Trans RF BJT NPN 12V 0.035A 300mW 3-Pin TO-236AB T/R
Datasheet
PDF | 127 кб
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Технические параметры
EU RoHS
Compliant
ECCN (US)
EAR99
Part Status
Obsolete
HTS
8541.29.00.95
SVHC
Yes
Automotive
No
PPAP
No
Type
NPN
Configuration
Single
Number of Elements per Chip
1
Maximum Collector Base Voltage (V)
15
Maximum Collector-Emitter Voltage (V)
12
Maximum Collector-Emitter Voltage Range (V)
&l;20
Maximum Emitter Base Voltage (V)
2
Maximum DC Collector Current (A)
0.035
Maximum DC Collector Current Range (A)
0.001 to 0.06
Maximum Collector Cut-Off Current (nA)
50
Operational Bias Conditions
8V/30mA
Minimum DC Current Gain
40@30mA@5V
Minimum DC Current Gain Range
30 to 50
Typical Output Capacitance (pF)
0.7
Maximum Power Dissipation (mW)
300
Typical Power Gain (dB)
13
Maximum Transition Frequency (MHz)
6000(Typ)
Maximum Noise Figure (dB)
3(Typ)
Minimum Operating Temperature (В°C)
-65
Maximum Operating Temperature (В°C)
175
Packaging
Tape and Reel
Pin Count
3
Standard Package Name
SOT-23
Supplier Package
TO-236AB
Mounting
Surface Mount
Package Height
1(Max)
Package Length
3(Max)
Package Width
1.4(Max)
PCB changed
3
Lead Shape
Gull-wing
Показать все
Описание
In addition to offering the benefits of traditional BJTs, the BFR93A,215 RF amplifier from NXP Semiconductors is perfect for high radio frequency power situations. This RF transistor has an operating temperature range of -65 В°C to 175 В°C.
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