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Курс ЦБ на 18.07.2025
$78,19
€90,97

NXP Semiconductors BFT92,215

артикул BFT92,215
NXP Semiconductors
производитель
Trans RF BJT PNP 15V 0.025A 300mW 3-Pin TO-236AB T/R
Datasheet PDF | 180 кб
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Технические параметры
EU RoHS
Compliant
ECCN (US)
EAR99
Part Status
Obsolete
HTS
8541.29.00.95
SVHC
Yes
Automotive
No
PPAP
No
Type
PNP
Configuration
Single
Number of Elements per Chip
1
Maximum Collector Base Voltage (V)
20
Maximum Collector-Emitter Voltage (V)
15
Maximum Collector-Emitter Voltage Range (V)
&l;20
Maximum Emitter Base Voltage (V)
2
Maximum DC Collector Current (A)
0.025
Maximum DC Collector Current Range (A)
0.001 to 0.06
Maximum Collector Cut-Off Current (nA)
50
Operational Bias Conditions
10V/14mA
Minimum DC Current Gain
20@14mA@10V
Minimum DC Current Gain Range
2 to 30
Typical Input Capacitance (pF)
0.8
Typical Output Capacitance (pF)
0.75
Maximum Power Dissipation (mW)
300
Typical Power Gain (dB)
18
Maximum Transition Frequency (MHz)
5000(Typ)
Maximum Noise Figure (dB)
2.5(Typ)
Minimum Operating Temperature (В°C)
-65
Maximum Operating Temperature (В°C)
175
Packaging
Tape and Reel
Pin Count
3
Standard Package Name
SOT
Supplier Package
TO-236AB
Mounting
Surface Mount
Package Height
1(Max)
Package Length
3(Max)
Package Width
1.4(Max)
PCB changed
3
Lead Shape
Gull-wing
Описание
Use this BFT92,215 RF amplifier from NXP Semiconductors in your circuit so that it is operating at high RF frequencies. This RF transistor has a minimum operating temperature of -65 В°C and a maximum of 175 В°C.
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