Курс ЦБ на 18.07.2025
$78,19
€90,97
ГлавнаяКаталогDiodes, Transistors and ThyristorsBipolar TransistorsRF BJTNXP Semiconductors BFQ18A,115
NXP Semiconductors BFQ18A,115
артикул BFQ18A,115
NXP Semiconductors
производитель
Trans RF BJT NPN 18V 0.15A 1000mW 4-Pin(3+Tab) SOT-89 T/R
Datasheet
PDF | 224 кб
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Технические параметры
EU RoHS
Compliant
ECCN (US)
EAR99
Part Status
Obsolete
HTS
8541.29.00.95
SVHC
Yes
Automotive
No
PPAP
No
Type
NPN
Configuration
Single Dual Collector
Number of Elements per Chip
1
Maximum Collector Base Voltage (V)
25
Maximum Collector-Emitter Voltage (V)
18
Maximum Collector-Emitter Voltage Range (V)
&l;20
Maximum Emitter Base Voltage (V)
2
Maximum DC Collector Current (A)
0.15
Maximum DC Collector Current Range (A)
0.12 to 0.5
Minimum DC Current Gain
25@100mA@10V
Minimum DC Current Gain Range
2 to 30
Maximum Power Dissipation (mW)
1000
Maximum Transition Frequency (MHz)
4000(Typ)
Minimum Operating Temperature (В°C)
-65
Maximum Operating Temperature (В°C)
175
Packaging
Tape and Reel
Pin Count
4
Standard Package Name
SOT-89
Supplier Package
SOT-89
Mounting
Surface Mount
Package Height
1.6(Max)
Package Length
4.6(Max)
Package Width
2.6(Max)
PCB changed
3
Tab
Tab
Lead Shape
Flat
Показать все
Описание
Operating at higher RF frequencies has never been easier with this specially designed BFQ18A,115 RF amplifier from NXP Semiconductors. This RF transistor has an operating temperature range of -65 В°C to 175 В°C.
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