Курс ЦБ на 15.05.2026
$73,14
€86,29
ГлавнаяКаталогDiodes, Transistors and ThyristorsIGBT TransistorsIGBT ChipSTMicroelectronics STGW30NC120HD
STMicroelectronics STGW30NC120HD
артикул STGW30NC120HD
STMicroelectronics
производитель
Trans IGBT Chip N-CH 1200V 60A 220000mW 3-Pin(3+Tab) TO-247 Tube
Datasheet
PDF | 286 кб
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Технические параметры
EU RoHS
Compliant with Exemption
ECCN (US)
EAR99
Part Status
Active
HTS
8541.29.00.95
SVHC
Yes
SVHC Exceeds Threshold
Yes
Automotive
No
PPAP
No
Channel Type
N
Configuration
Single
Maximum Gate Emitter Voltage (V)
В±25
Maximum Collector-Emitter Voltage (V)
1200
Typical Collector Emitter Saturation Voltage (V)
2.2
Maximum Continuous Collector Current (A)
60
Maximum Gate Emitter Leakage Current (uA)
0.1
Maximum Power Dissipation (mW)
220000
Minimum Operating Temperature (В°C)
-55
Maximum Operating Temperature (В°C)
150
Packaging
Tube
Supplier Package
TO-247
Pin Count
3
Standard Package Name
TO-247
Mounting
Through Hole
Package Height
20.15(Max)
Package Length
15.75(Max)
Package Width
5.15(Max)
PCB changed
3
Tab
Tab
Lead Shape
Through Hole
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Описание
The STGW30NC120HD IGBT transistor from STMicroelectronics will work effectively even with higher currents. Its maximum power dissipation is 220000 mW. It has a maximum collector emitter voltage of 1200 V. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It is made in a single configuration. This IGBT transistor has an operating temperature range of -55 В°C to 150 В°C.
