Курс ЦБ на 15.05.2026
$73,14
€86,29
ГлавнаяКаталогDiodes, Transistors and ThyristorsIGBT TransistorsIGBT ChipSTMicroelectronics STGW40H65DFB
STMicroelectronics STGW40H65DFB
артикул STGW40H65DFB
STMicroelectronics
производитель
Trans IGBT Chip N-CH 650V 80A 283000mW 3-Pin(3+Tab) TO-247 Tube
Datasheet
PDF | 496 кб
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Технические параметры
EU RoHS
Compliant with Exemption
ECCN (US)
EAR99
Part Status
Active
HTS
8541.29.00.95
SVHC
Yes
SVHC Exceeds Threshold
Yes
Automotive
No
PPAP
No
Technology
Trench; Field Stop
Channel Type
N
Configuration
Single
Maximum Gate Emitter Voltage (V)
В±20
Maximum Collector-Emitter Voltage (V)
650
Typical Collector Emitter Saturation Voltage (V)
1.6
Maximum Continuous Collector Current (A)
80
Maximum Gate Emitter Leakage Current (uA)
0.25
Maximum Power Dissipation (mW)
283000
Minimum Operating Temperature (В°C)
-55
Maximum Operating Temperature (В°C)
175
Packaging
Tube
Supplier Package
TO-247
Pin Count
3
Standard Package Name
TO-247
Mounting
Through Hole
Package Height
20.15(Max)
Package Length
15.75(Max)
Package Width
5.15(Max)
PCB changed
3
Tab
Tab
Lead Shape
Through Hole
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Описание
The STGW40H65DFB IGBT transistor from STMicroelectronics is the best electronic switch for fast switching. It has a maximum collector emitter voltage of 650 V. Its maximum power dissipation is 283000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This IGBT transistor has an operating temperature range of -55 В°C to 175 В°C. It is made in a single configuration. This device utilizes field stop|trench technology.
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