Курс ЦБ на 15.05.2026
$73,14
€86,29
Infineon IRGS4607DPBF
артикул IRGS4607DPBF
Infineon
производитель
Trans IGBT Chip N-CH 600V 11A 58000mW 3-Pin(2+Tab) D2PAK Tube
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Технические параметры
Technical
Collector Emitter Breakdown Voltage
600 V
Collector Emitter Saturation Voltage
1.75 V
Collector Emitter Voltage (VCEO)
2.05 V
Element Configuration
Single
Max Collector Current
7 A
Max Operating Temperature
175 °C
Max Power Dissipation
58 W
Min Operating Temperature
-40 °C
Reverse Recovery Time
48 ns
Physical
Case/Package
D2PAK
Mount
Surface Mount
Number of Pins
3
Weight
260.39037 mg
Dimensions
Height
4.83 mm
Length
10.67 mm
Width
9.65 mm
Compliance
REACH SVHC
No SVHC
RoHS
Compliant
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Описание
Trans IGBT Chip N-CH 600V 11A 58000mW 3-Pin(2+Tab) D2PAK Tube
Insulated Gate Bipolar Transistor, 11A I(C), 600V V(BR)CES, N-Channel, TO-263AB
IGBT Transistors 600V TRENCH IGBT ULTRAFAST
Tape And Reel / G6, 600V, 7A, D2pakcopak Trr
IGBT, SINGLE, 600V, 11A, TO-263
IRGS4607 - DISCRETE IGBT WITH AN
IGBT, SINGLE, 600V, 11A, TO-263; DC Collector Current: 11A; Collector Emitter Saturation Voltage Vce(on): 1.75V; Power Dissipation Pd: 58W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-263; No. of Pins:
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