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Курс ЦБ на 15.05.2026
$73,14
€86,29
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Infineon AIKW50N65DF5XKSA1

артикул AIKW50N65DF5XKSA1
Infineon
производитель
Igbt, Aec-Q101, 650V, 80A, 270W, To-247 Rohs Compliant: Yes
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Технические параметры
Technical
Package Quantity
240
Power Dissipation
270 W
Compliance
RoHS
Non-Compliant
Supply Chain
Lifecycle Status
Production (Last Updated: 2 years ago)
Описание

Igbt, Aec-Q101, 650V, 80A, 270W, To-247 Rohs Compliant: Yes

IGBT, AEC-Q101, 650V, 80A, 270W, TO-247; DC Collector Current: 80A; Collector Emitter Saturation Voltage Vce(on): 1.66V; Power Dissipation Pd: 270W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-247; No.

TRENCHSTOP™ 5 AUTO IGBT technology redefines “best-in-class” IGBT by providing unmatched performance in terms of efficiency for hard switching applications, PG-TO247-3, RoHS

TRENCHSTOP 5 AUTO IGBT technology redefines best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. | Summary of Features: 650V blocking voltage; Max junction temperature 175C; Very low conduction and switching losses; Very low junction and case temperature; High power density design; Positive temperature coefficient in V CEsat | Benefits: 50V higher blocking voltage; Highest efficiency; High device reliability; Low temperature leads to less cooling efforts; Less system costs | Target Applications: Fast switching automotive applications; On-board charger; PFC; DC-DC converter; DC-AC converter