Курс ЦБ на 15.05.2026
$73,14
€86,29
ГлавнаяКаталогDiodes, Transistors and ThyristorsIGBT TransistorsIGBT ChipSTMicroelectronics STGW25H120F2
STMicroelectronics STGW25H120F2
артикул STGW25H120F2
STMicroelectronics
производитель
Trans IGBT Chip N-CH 1200V 50A 375000mW 3-Pin(3+Tab) TO-247 Tube
Datasheet
PDF | 944 кб
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Технические параметры
EU RoHS
Compliant with Exemption
ECCN (US)
EAR99
Part Status
Active
SVHC
Yes
SVHC Exceeds Threshold
Yes
Automotive
No
PPAP
No
Technology
Trench; Field Stop
Channel Type
N
Configuration
Single
Maximum Gate Emitter Voltage (V)
В±20
Maximum Collector-Emitter Voltage (V)
1200
Typical Collector Emitter Saturation Voltage (V)
2.1
Maximum Continuous Collector Current (A)
50
Maximum Gate Emitter Leakage Current (uA)
0.25
Maximum Power Dissipation (mW)
375000
Minimum Operating Temperature (В°C)
-55
Maximum Operating Temperature (В°C)
175
Packaging
Tube
Supplier Package
TO-247
Pin Count
3
Standard Package Name
TO-247
Mounting
Through Hole
Package Height
20.15(Max)
Package Length
15.75(Max)
Package Width
5.15(Max)
PCB changed
3
Tab
Tab
Lead Shape
Through Hole
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Описание
This fast-switching STGW25H120F2 IGBT transistor from STMicroelectronics will be perfect in your circuit. Its maximum power dissipation is 375000 mW. It has a maximum collector emitter voltage of 1200 V. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It is made in a single configuration. This device utilizes field stop|trench technology. This IGBT transistor has an operating temperature range of -55 В°C to 175 В°C.
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