Курс ЦБ на 15.05.2026
$73,14
€86,29
ГлавнаяКаталогDiodes, Transistors and ThyristorsIGBT TransistorsIGBT ChipSTMicroelectronics STGD3NB60SDT4
STMicroelectronics STGD3NB60SDT4
артикул STGD3NB60SDT4
STMicroelectronics
производитель
Trans IGBT Chip N-CH 600V 6A 48000mW Automotive 3-Pin(2+Tab) DPAK T/R
Datasheet
PDF | 313 кб
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Технические параметры
EU RoHS
Compliant with Exemption
ECCN (US)
EAR99
Part Status
Active
HTS
8504.40.60.18
SVHC
Yes
SVHC Exceeds Threshold
Yes
Automotive
Yes
PPAP
Unknown
Channel Type
N
Configuration
Single
Maximum Gate Emitter Voltage (V)
В±20
Maximum Collector-Emitter Voltage (V)
600
Typical Collector Emitter Saturation Voltage (V)
1.2
Maximum Continuous Collector Current (A)
6
Maximum Gate Emitter Leakage Current (uA)
0.1
Maximum Power Dissipation (mW)
48000
Minimum Operating Temperature (В°C)
-65
Maximum Operating Temperature (В°C)
175
Packaging
Tape and Reel
Pin Count
3
Standard Package Name
TO-252
Supplier Package
DPAK
Mounting
Surface Mount
Package Height
2.4(Max)
Package Length
6.6(Max)
Package Width
6.2(Max)
PCB changed
2
Tab
Tab
Lead Shape
Gull-wing
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Описание
You won&s;t need to worry about any lagging in your circuit with this STGD3NB60SDT4 IGBT transistor from STMicroelectronics. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 48000 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This IGBT transistor has a minimum operating temperature of -65 В°C and a maximum of 175 В°C. It is made in a single configuration.
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