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NXP Semiconductors BFT46,215

артикул BFT46,215
NXP Semiconductors
производитель
Trans JFET N-CH 25V 10mA Si 3-Pin TO-236AB T/R
Datasheet PDF | 86 кб
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Технические параметры
EU RoHS
Compliant
ECCN (US)
EAR99
Part Status
Obsolete
HTS
8541.29.00.95
SVHC
Yes
Automotive
No
PPAP
No
Material
Si
Channel Type
N
Configuration
Single
Maximum Drain Source Voltage (V)
25
Maximum Gate Source Voltage (V)
25
Maximum Drain Gate Voltage (V)
25
Maximum Continuous Drain Current (mA)
10
Maximum Power Dissipation (mW)
250
Minimum Operating Temperature (В°C)
-65
Maximum Operating Temperature (В°C)
150
Packaging
Tape and Reel
Pin Count
3
Standard Package Name
SOT-23
Supplier Package
TO-236AB
Mounting
Surface Mount
Package Height
1(Max)
Package Length
3(Max)
Package Width
1.4(Max)
PCB changed
3
Lead Shape
Gull-wing
Описание
The simplest type of field-effect transistor is this BFT46,215 JFET from NXP Semiconductors. Its maximum power dissipation is 250 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. It is made in a single configuration. This junction field effect transistor has a minimum operating temperature of -65 В°C and a maximum of 150 В°C.
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