onsemi J310
по количеству
UHF BAND Si N-CHANNEL RF SMALL SIGNAL JFET TO-92
RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Junction FET, TO-226AA
This device is designed for VHF/UHF amplifier, oscillator and mixer applications. As a common gate amplifier, 16 dB at 100 MHz and 12 dB at 450 MHz can be realized. Sourced from Process 92.
TRANSISTOR, JFET N TO-92; Gate-Source Cutoff Voltage Vgs(off) Max: 6.5V; Transistor Case Style: TO-92; No. of Pins: 3 Pin; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Current Idss Max: 60mA; Current Idss Min: 24mA; Cur
JFET; Transistor Polarity:N Channel; Package/Case:TO-92; Continuous Drain Current, Id:60mA; Current Rating:10mA; Gate-Source Breakdown Voltage:30V; Gate-Source Cutoff Voltage:8V; Leaded Process Compatible:Yes ;RoHS Compliant: Yes
TRANSISTOR, JFET, N, TO-92; Transistor Type:JFET; Breakdown Voltage Vbr:-25V; Zero Gate Voltage Drain Current Idss:24mA to 60mA; Gate-Source Cutoff Voltage Vgs(off) Max:6.5V; Power Dissipation Pd:625mW; Transistor Case Style:TO-92; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Application Code:RFA; Current Idss Max:60mA; Current Idss Min:24mA; Current Ig:10mA; Device Marking:J310; Drain Source Voltage Vds:25V; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-92; Pin Configuration:m; Pin Format:m; Power Dissipation Pd:625mW; Power Dissipation Ptot Max:625mW; Termination Type:Through Hole; Transistor Polarity:N Channel
