Курс ЦБ на 13.03.2026
$79,07
€91,39
Vishay SI4156DY-T1-GE3
артикул SI4156DY-T1-GE3
Vishay
производитель
Trans MOSFET N-CH 30V 24A 8-Pin SOIC N T/R
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Технические параметры
EU RoHS
Compliant
ECCN (US)
EAR99
Part Status
Active
HTS
8541.29.00.95
Automotive
No
PPAP
No
Category
Power MOSFET
Configuration
Single Quad Drain Triple Source
Process Technology
TrenchFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain Source Voltage (V)
30
Maximum Gate Source Voltage (V)
В±20
Maximum Gate Threshold Voltage (V)
2.2
Maximum Continuous Drain Current (A)
24
Maximum Gate Source Leakage Current (nA)
100
Maximum IDSS (uA)
1
Maximum Drain Source Resistance (mOhm)
6@10V
Typical Gate Charge @ Vgs (nC)
28@10V; 12@4.5V
Typical Gate Charge @ 10V (nC)
28
Typical Gate to Drain Charge (nC)
4.6
Typical Gate to Source Charge (nC)
5.4
Typical Reverse Recovery Charge (nC)
17
Typical Input Capacitance @ Vds (pF)
1700@15V
Typical Output Capacitance (pF)
350
Maximum Power Dissipation (mW)
2500
Typical Fall Time (ns)
15
Typical Rise Time (ns)
20
Typical Turn-Off Delay Time (ns)
25
Typical Turn-On Delay Time (ns)
25
Minimum Operating Temperature (В°C)
-55
Maximum Operating Temperature (В°C)
150
Packaging
Tape and Reel
Supplier Package
SOIC N
Pin Count
8
Standard Package Name
SOP
Mounting
Surface Mount
Package Height
1.55(Max)
Package Length
5(Max)
Package Width
4(Max)
PCB changed
8
Lead Shape
Gull-wing
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Описание
Make an effective common source amplifier using this SI4156DY-T1-GE3 power MOSFET from Vishay. Its maximum power dissipation is 2500 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 В°C to 150 В°C. This device utilizes TrenchFET technology.
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