Курс ЦБ на 17.03.2026
$81,05
€92,66
Vishay SI4174DY-T1-GE3
артикул SI4174DY-T1-GE3
Vishay
производитель
Trans MOSFET N-CH 30V 17A 8-Pin SOIC N T/R
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Технические параметры
EU RoHS
Compliant with Exemption
ECCN (US)
EAR99
Part Status
Active
HTS
8541.29.00.95
SVHC
Yes
SVHC Exceeds Threshold
Yes
Automotive
No
PPAP
No
Category
Power MOSFET
Configuration
Single Quad Drain Triple Source
Process Technology
TrenchFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain Source Voltage (V)
30
Maximum Gate Source Voltage (V)
В±20
Maximum Continuous Drain Current (A)
17
Maximum Drain Source Resistance (mOhm)
9.5@10V
Typical Gate Charge @ Vgs (nC)
8@4.5V; 18@10V
Typical Gate Charge @ 10V (nC)
18
Typical Input Capacitance @ Vds (pF)
985@15V
Maximum Power Dissipation (mW)
2500
Typical Fall Time (ns)
9
Typical Rise Time (ns)
12
Typical Turn-Off Delay Time (ns)
19
Typical Turn-On Delay Time (ns)
14
Minimum Operating Temperature (В°C)
-55
Maximum Operating Temperature (В°C)
150
Packaging
Tape and Reel
Supplier Package
SOIC N
Pin Count
8
Standard Package Name
SOP
Mounting
Surface Mount
Package Height
1.55(Max)
Package Length
5(Max)
Package Width
4(Max)
PCB changed
8
Lead Shape
Gull-wing
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Описание
Do you require the advantages of traditional transistors coupled with the switching benefits of power MOSFETs? Vishay&s;s SI4174DY-T1-GE3 power MOSFET can provide a solution. Its maximum power dissipation is 2500 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 В°C to 150 В°C. This device utilizes TrenchFET technology.
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