Курс ЦБ на 06.03.2026
$78,19
€90,79
Vishay SI4162DY-T1-GE3
артикул SI4162DY-T1-GE3
Vishay
производитель
Trans MOSFET N-CH 30V 19.3A 8-Pin SOIC N T/R
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Технические параметры
EU RoHS
Compliant with Exemption
ECCN (US)
EAR99
Part Status
Active
HTS
8541.29.00.95
SVHC
Yes
SVHC Exceeds Threshold
Yes
Automotive
No
PPAP
No
Category
Power MOSFET
Configuration
Single Quad Drain Triple Source
Process Technology
TrenchFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain Source Voltage (V)
30
Maximum Gate Source Voltage (V)
В±20
Maximum Gate Threshold Voltage (V)
3
Maximum Continuous Drain Current (A)
19.3
Maximum Drain Source Resistance (mOhm)
7.9@10V
Typical Gate Charge @ Vgs (nC)
20@10V; 8.8@4.5V
Typical Gate Charge @ 10V (nC)
20
Typical Gate to Drain Charge (nC)
2.2
Typical Gate to Source Charge (nC)
3.5
Typical Reverse Recovery Charge (nC)
15
Typical Input Capacitance @ Vds (pF)
1155@15V
Typical Output Capacitance (pF)
260
Maximum Power Dissipation (mW)
2500
Typical Fall Time (ns)
10
Typical Rise Time (ns)
15
Typical Turn-Off Delay Time (ns)
25
Typical Turn-On Delay Time (ns)
20
Minimum Operating Temperature (В°C)
-55
Maximum Operating Temperature (В°C)
150
Packaging
Tape and Reel
Supplier Package
SOIC N
Pin Count
8
Standard Package Name
SOP
Mounting
Surface Mount
Package Height
1.55(Max)
Package Length
5(Max)
Package Width
4(Max)
PCB changed
8
Lead Shape
Gull-wing
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Описание
If you need to either amplify or switch between signals in your design, then Vishay&s;s SI4162DY-T1-GE3 power MOSFET is for you. Its maximum power dissipation is 2500 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This N channel MOSFET transistor operates in enhancement mode. This device is made with TrenchFET technology. This MOSFET transistor has a minimum operating temperature of -55 В°C and a maximum of 150 В°C.
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