Курс ЦБ на 17.02.2026
$76,62
€91,04
Vishay SQ4840EY-T1-GE3
артикул SQ4840EY-T1-GE3
Vishay
производитель
Trans MOSFET N-CH 40V 20.7A Automotive 8-Pin SOIC N T/R
По данному товару предложений не найдено. Оставьте заявку, и мы вам перезвоним.
Технические параметры
EU RoHS
Compliant
Part Status
Obsolete
HTS
8541.29.00.95
Automotive
Yes
PPAP
Unknown
Category
Power MOSFET
Configuration
Single Quad Drain Triple Source
Process Technology
TrenchFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain Source Voltage (V)
40
Maximum Gate Source Voltage (V)
В±20
Maximum Gate Threshold Voltage (V)
2.5
Maximum Continuous Drain Current (A)
20.7
Maximum Gate Source Leakage Current (nA)
100
Maximum IDSS (uA)
1
Maximum Drain Source Resistance (mOhm)
9@10V
Typical Gate Charge @ Vgs (nC)
41@10V
Typical Gate Charge @ 10V (nC)
41
Typical Input Capacitance @ Vds (pF)
1950@20V
Maximum Power Dissipation (mW)
7100
Typical Fall Time (ns)
17
Typical Rise Time (ns)
11
Typical Turn-Off Delay Time (ns)
45
Typical Turn-On Delay Time (ns)
14
Minimum Operating Temperature (В°C)
-55
Maximum Operating Temperature (В°C)
175
Supplier Temperature Grade
Automotive
Packaging
Tape and Reel
Supplier Package
SOIC N
Pin Count
8
Standard Package Name
SOIC
Mounting
Surface Mount
Package Height
1.55(Max)
Package Length
5(Max)
Package Width
4(Max)
PCB changed
8
Lead Shape
Gull-wing
Показать все
Описание
Make an effective common gate amplifier using this SQ4840EY-T1_GE3 power MOSFET from Vishay. Its maximum power dissipation is 7100 mW. This device is made with TrenchFET technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 В°C and a maximum of 175 В°C.
Похожие товары
onsemi
Trans Mosfet N-ch 30V 14.5A 8-PIN SOIC T/r / Mosfet N-ch 30V 14.5A 8-SOIC
Infineon
Mosfet Transistor, N Channel, 16 A, 30 V, 0.0055 Ohm, 10 V, 2.25 V Rohs Compliant: Yes
