Курс ЦБ на 17.02.2026
$76,62
€91,04
Vishay SI4840BDY-T1-E3
артикул SI4840BDY-T1-E3
Vishay
производитель
Trans MOSFET N-CH 40V 19A 8-Pin SOIC N T/R
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Технические параметры
EU RoHS
Compliant with Exemption
ECCN (US)
EAR99
Part Status
Active
HTS
8541.29.00.95
SVHC
Yes
SVHC Exceeds Threshold
Yes
Automotive
No
PPAP
No
Category
Power MOSFET
Configuration
Single Quad Drain Triple Source
Process Technology
TrenchFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain Source Voltage (V)
40
Maximum Gate Source Voltage (V)
В±20
Maximum Gate Threshold Voltage (V)
3
Operating Junction Temperature (В°C)
-55 to 150
Maximum Continuous Drain Current (A)
19
Maximum Gate Source Leakage Current (nA)
100
Maximum IDSS (uA)
1
Maximum Drain Source Resistance (mOhm)
9@10V
Typical Gate Charge @ Vgs (nC)
33@10V; 15@4.5V
Typical Gate Charge @ 10V (nC)
33
Typical Gate to Drain Charge (nC)
5.1
Typical Gate to Source Charge (nC)
6.7
Typical Reverse Recovery Charge (nC)
26
Typical Input Capacitance @ Vds (pF)
2000@20V
Typical Reverse Transfer Capacitance @ Vds (pF)
150@20V
Minimum Gate Threshold Voltage (V)
1
Typical Output Capacitance (pF)
260
Maximum Power Dissipation (mW)
2500
Typical Fall Time (ns)
10
Typical Rise Time (ns)
12; 15
Typical Turn-Off Delay Time (ns)
25; 30
Typical Turn-On Delay Time (ns)
25; 10
Minimum Operating Temperature (В°C)
-55
Maximum Operating Temperature (В°C)
150
Packaging
Tape and Reel
Maximum Power Dissipation on PCB @ TC=25В°C (W)
2.5
Maximum Pulsed Drain Current @ TC=25В°C (A)
50
Maximum Junction Ambient Thermal Resistance on PCB (В°C/W)
85
Typical Diode Forward Voltage (V)
0.8
Typical Gate Plateau Voltage (V)
3.6
Typical Reverse Recovery Time (ns)
30
Maximum Diode Forward Voltage (V)
1.2
Maximum Gate Resistance (Ohm)
2.1
Maximum Positive Gate Source Voltage (V)
20
Maximum Continuous Drain Current on PCB @ TC=25В°C (A)
12.4
Pin Count
8
Standard Package Name
SOP
Supplier Package
SOIC N
Mounting
Surface Mount
Package Height
1.55(Max)
Package Length
5(Max)
Package Width
4(Max)
PCB changed
8
Lead Shape
Gull-wing
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Описание
This SI4840BDY-T1-E3 power MOSFET from Vishay can be used for amplification in your circuit. Its maximum power dissipation is 2500 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This device is made with TrenchFET technology. This MOSFET transistor has a minimum operating temperature of -55 В°C and a maximum of 150 В°C. This N channel MOSFET transistor operates in enhancement mode.
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