Курс ЦБ на 12.10.2024
$96,07
€105,11
NXP Semiconductors MRF5S19060NBR1
артикул MRF5S19060NBR1
NXP Semiconductors
производитель
Trans Mosfet N-ch 65V 4-PIN TO-272 Wb Ep T/r
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Технические параметры
Technical
Current Rating
750 mA
Drain to Source Breakdown Voltage
65 V
Drain to Source Voltage (Vdss)
65 V
Element Configuration
Single
Frequency
1.99 GHz
Gain
14 dB
Gate to Source Voltage (Vgs)
15 V
Max Operating Temperature
150 °C
Max Power Dissipation
218.8 W
Min Operating Temperature
-65 °C
Output Power
12 W
Packaging
Cut Tape
Power Dissipation
218.8 W
Test Current
750 mA
Test Voltage
28 V
Voltage Rating
65 V
Voltage Rating (DC)
28 V
Physical
Case/Package
TO-272-4
Mount
Screw
Number of Pins
4
Weight
1.911098 g
Compliance
Halogen Free
Not Halogen Free
Lead Free
Contains Lead
RoHS
Compliant
Показать все
Описание
Trans MOSFET N-CH 65V 4-Pin TO-272 WB EP T/R
RF MOSFET Transistors 1990MHZ 60W 28V TO272WB4N
UHF BAND Si N-CHANNEL RF POWER MOSFET TO-272
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