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Курс ЦБ на 22.05.2024
$90,41
€98,3

ROHM RE1C002UNTCL

артикул RE1C002UNTCL
ROHM
производитель
RE1C002UN Series 20 V 1.2 Ohm 200 mA Surface Mount Small Signal Mosfet - EMT-3F
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Технические параметры
Technical
Continuous Drain Current (ID)
200 mA
Drain to Source Breakdown Voltage
20 V
Drain to Source Resistance
800 mΩ
Drain to Source Voltage (Vdss)
20 V
Gate to Source Voltage (Vgs)
8 V
Input Capacitance
25 pF
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
150 mW
Min Operating Temperature
-55 °C
Number of Channels
1
Packaging
Tape & Reel (TR)
Power Dissipation
150 mW
Rds On Max
1.2 Ω
Turn-Off Delay Time
15 ns
Turn-On Delay Time
5 ns
Physical
Case/Package
SOT-89
Mount
Surface Mount
Number of Terminals
3
Dimensions
Height
850 µm
Compliance
Lead Free
Lead Free
RoHS
Compliant
Supply Chain
Lifecycle Status
Production (Last Updated: 2 years ago)
Описание

RE1C002UN Series 20 V 1.2 Ohm 200 mA Surface Mount Small Signal Mosfet - EMT-3F

MOSFET, N-CH, 20V, 0.2A, 150DEG C, 0.15W; Transistor Polarity:N Channel; Continuous Drain Current Id:200mA; Source Voltage Vds:20V; On

Transistors - FETs, MOSFETs - Single 1 (Unlimited) SC-89, SOT-490 Surface Mount MOSFET (Metal Oxide) N-Channel Cut Tape (CT) 1.2 Ω @ 100mA, 2.5V 200mA Ta 150°C TJ MOSFET N-CH 20V 0.2A EMT3

MOSFET, N-CH, 20V, 0.2A, 150DEG C, 0.15W; Transistor Polarity: N Channel; Continuous Drain Current Id: 200mA; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.8ohm; Rds(on) Test Voltage Vgs: 2.5V; Threshold Voltage Vgs: 1V; Power Dissipation Pd: 150mW; Transistor Case Style: SOT-416FL; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

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