Курс ЦБ на 20.04.2024
$93,44
€99,58
Cypress Semiconductor S29GL01GP11FFCR10
артикул S29GL01GP11FFCR10
Cypress Semiconductor
производитель
NOR Flash Parallel 3V/3.3V 1G-bit 128M x 8/64M x 16 110ns 64-Pin Fortified BGA Tray
Datasheet
PDF | 1 мб
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Технические параметры
EU RoHS
Compliant
ECCN (US)
3A991b.1.a.
Part Status
Obsolete
HTS
8542.32.00.71
Automotive
No
PPAP
No
Cell Type
NOR
Chip Density (bit)
1G
Architecture
Sectored
Boot Block
No
Block Organization
Symmetrical
Address Bus Width (bit)
27/26
Sector Size
128Kbyte x 1024
Page Size
8Words/16byte
Number of Bits/Word (bit)
8/16
Number of Words
128M/64M
Programmability
Yes
Timing Type
Asynchronous
Max. Access Time (ns)
110
Maximum Erase Time (s)
2048/Chip
Maximum Page Access Time (ns)
25
Maximum Programming Time (ms)
984000(Typ)/Chip
OE Access Time (ns)
25
Process Technology
90nm, MirrorBit
Interface Type
Parallel
Minimum Operating Supply Voltage (V)
3
Typical Operating Supply Voltage (V)
3; 3.3
Maximum Operating Supply Voltage (V)
3.6
Programming Voltage (V)
3 to 3.6
Operating Current (mA)
110
Page Read Current (mA)
20
Program Current (mA)
90
Minimum Operating Temperature (В°C)
0
Maximum Operating Temperature (В°C)
85
Supplier Temperature Grade
Commercial
Command Compatible
Yes
ECC Support
No
Support of Page Mode
Yes
Minimum Endurance (Cycles)
100000(Typ)
Packaging
Tray
Supplier Package
Fortified BGA
Pin Count
64
Standard Package Name
BGA
Mounting
Surface Mount
Package Height
0.6(Min)
Package Length
13
Package Width
11
PCB changed
64
Lead Shape
Ball
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Описание
NOR Flash Parallel 3V/3.3V 1Gbit 128M/64M x 8bit/16bit 110ns 64-Pin Fortified BGA Tray
1G X 1 FLASH 3V PROM 110 ns PBGA64
MEMORY, FLASH NOR, 1GBIT, FBGA-64
MEMORY, FLASH NOR, 1GBIT, FBGA-64; Memory Type:Flash - NOR; Memory Size:1Gbit; Flash Memory Configuration:128M x 8bit; Supply Voltage Min:2.7V; Supply Voltage Max:3.6V; Memory Case Style:FBGA; No. of Pins:64; Clock Frequency:-; MSL:-
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