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ГлавнаяКаталогMemoryMemory ChipsFlashCypress Semiconductor S29WS256P0LBFW000

Cypress Semiconductor S29WS256P0LBFW000

артикул S29WS256P0LBFW000
Cypress Semiconductor
производитель
NOR Flash Parallel/Serial 1.8V 256M-bit 16M x 16 80ns 84-Pin VTFBGA Tray
Datasheet PDF | 1 мб
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Технические параметры
EU RoHS
Compliant
ECCN (US)
3A991.B.1.A
Part Status
LTB
HTS
8542.32.00.71
Automotive
No
PPAP
No
Cell Type
NOR
Chip Density (bit)
256M
Architecture
Sectored
Boot Block
Yes
Block Organization
Asymmetrical
Location of Boot Block
Bottom; Top
Address Bus Width (bit)
24
Sector Size
32Kbyte x 8; 128Kbyte x 254
Bank Size
16/16/16/16/16/16/16/16/16/16/16/16/16/16/16/16Mb
Number of Banks
16
Page Size
8Words
Number of Bits/Word (bit)
16
Number of Words
16M
Programmability
Yes
Timing Type
Asynchronous; Synchronous
Max. Access Time (ns)
80
Maximum Erase Time (s)
308/Chip
Maximum Page Access Time (ns)
20
Maximum Programming Time (ms)
314600/Chip
OE Access Time (ns)
13.5
Process Technology
90nm
Interface Type
Parallel; Serial
Minimum Operating Supply Voltage (V)
1.7
Maximum Operating Frequency (MHz)
54
Typical Operating Supply Voltage (V)
1.8
Maximum Operating Supply Voltage (V)
1.95
Programming Voltage (V)
1.7 to 1.95; 8.5 to 9.5
Operating Current (mA)
80
Page Read Current (mA)
15
Program Current (mA)
60
Minimum Operating Temperature (В°C)
-25
Maximum Operating Temperature (В°C)
85
Supplier Temperature Grade
Wireless
Command Compatible
Yes
ECC Support
No
Support of Page Mode
Yes
Minimum Endurance (Cycles)
100000(Typ)
Packaging
Tray
Supplier Package
VTFBGA
Pin Count
84
Standard Package Name
BGA
Mounting
Surface Mount
Package Height
0.76(Max)
Package Length
11.6
Package Width
8
PCB changed
84
Lead Shape
Ball
Описание

NOR Flash Parallel/Serial 1.8V 256Mbit 16M x 16bit 80ns 84-Pin FBGA Tray

Burst Parallel NOR Flash Memory, 80 Mbit Density, FBGA-84, RoHS

16M X 16 FLASH 1.8V PROM 80 ns PBGA84

FBGA-84(11.6x8) NOR FLASH ROHS

IC FLASH 256MBIT PARALLEL 84FBGA

IC 256 MEG (16M X 16-BIT)MIRRO

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