Курс ЦБ на 19.04.2024
$94,09
€100,53
ГлавнаяКаталогDiodes, Transistors and ThyristorsBipolar TransistorsGP BJTInfineon Technologies BDP947H6327XTSA1
Infineon Technologies BDP947H6327XTSA1
артикул BDP947H6327XTSA1
Infineon Technologies
производитель
Trans GP BJT NPN 45V 3A 5000mW Automotive 4-Pin(3+Tab) SOT-223 T/R
Datasheet
PDF | 526 кб
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Технические параметры
EU RoHS
Compliant
ECCN (US)
EAR99
Part Status
LTB
HTS
8541.29.00.75
Automotive
Yes
PPAP
Unknown
Type
NPN
Category
Bipolar Power
Material
Si
Configuration
Single Dual Collector
Number of Elements per Chip
1
Maximum Collector Base Voltage (V)
45
Maximum Collector-Emitter Voltage (V)
45
Maximum Emitter Base Voltage (V)
5
Maximum Base Emitter Saturation Voltage (V)
1.3@0.2A@2A
Maximum Collector-Emitter Saturation Voltage (V)
0.5@0.2A@2A
Maximum DC Collector Current (A)
3
Minimum DC Current Gain
85@500mA@1V; 25@10mA@5V; 50@2A@2V
Maximum Power Dissipation (mW)
5000
Maximum Transition Frequency (MHz)
100(Typ)
Minimum Operating Temperature (В°C)
-65
Maximum Operating Temperature (В°C)
150
Packaging
Tape and Reel
Pin Count
4
Standard Package Name
SOT-223
Supplier Package
SOT-223
Mounting
Surface Mount
Package Height
1.6
Package Length
6.5
Package Width
3.5
PCB changed
3
Tab
Tab
Lead Shape
Gull-wing
Показать все
Описание
If you require a general purpose BJT that can handle high voltages, then the BDP947H6327XTSA1 BJT, developed by Infineon Technologies, is for you.
