Курс ЦБ на 24.04.2024
$93,29
€99,56
ГлавнаяКаталогDiodes, Transistors and ThyristorsIGBT TransistorsIGBT ChipInfineon Technologies IHW20N135R3FKSA1
Infineon Technologies IHW20N135R3FKSA1
артикул IHW20N135R3FKSA1
Infineon Technologies
производитель
Trans IGBT Chip N-CH 1350V 40A 310000mW 3-Pin(3+Tab) TO-247 Tube
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Технические параметры
EU RoHS
Compliant
ECCN (US)
EAR99
Part Status
Obsolete
HTS
8541.29.00.95
Automotive
No
PPAP
No
Channel Type
N
Configuration
Single
Maximum Gate Emitter Voltage (V)
В±20
Maximum Collector-Emitter Voltage (V)
1350
Typical Collector Emitter Saturation Voltage (V)
1.6
Maximum Continuous Collector Current (A)
40
Maximum Gate Emitter Leakage Current (uA)
0.1
Maximum Power Dissipation (mW)
310000
Minimum Operating Temperature (В°C)
-40
Maximum Operating Temperature (В°C)
175
Packaging
Tube
Supplier Package
TO-247
Pin Count
3
Standard Package Name
TO-247
Mounting
Through Hole
Package Height
20.9
Package Length
15.9
Package Width
5.03
PCB changed
3
Tab
Tab
Lead Shape
Through Hole
Показать все
Описание
This powerful and secure IHW20N135R3FKSA1 IGBT transistor from Infineon Technologies will make sure your circuit works properly. Its maximum power dissipation is 310000 mW. It has a maximum collector emitter voltage of 1350 V. It is made in a single configuration. This IGBT transistor has a minimum operating temperature of -40 В°C and a maximum of 175 В°C.
