Курс ЦБ на 25.04.2024
$92,51
€98,91
ГлавнаяКаталогDiodes, Transistors and ThyristorsFET TransistorsMOSFETsInfineon Technologies IPC100N04S51R2ATMA1
Infineon Technologies IPC100N04S51R2ATMA1
артикул IPC100N04S51R2ATMA1
Infineon Technologies
производитель
Trans MOSFET N-CH 40V 100A Automotive 8-Pin TDSON EP T/R
Datasheet
PDF | 410 кб
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Технические параметры
EU RoHS
Compliant with Exemption
ECCN (US)
EAR99
Part Status
Active
HTS
8541.29.00.95
SVHC
Yes
SVHC Exceeds Threshold
Yes
Automotive
Yes
PPAP
Unknown
Category
Power MOSFET
Configuration
Single Quad Drain Triple Source
Process Technology
OptiMOS 5
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain Source Voltage (V)
40
Maximum Gate Source Voltage (V)
В±20
Maximum Gate Threshold Voltage (V)
3.4
Maximum Continuous Drain Current (A)
100
Maximum Gate Source Leakage Current (nA)
100
Maximum IDSS (uA)
10
Maximum Drain Source Resistance (mOhm)
1.2@10V
Typical Gate Charge @ Vgs (nC)
99@10V
Typical Gate Charge @ 10V (nC)
99
Typical Input Capacitance @ Vds (pF)
5750@25V
Maximum Power Dissipation (mW)
150000
Typical Fall Time (ns)
15
Typical Rise Time (ns)
7
Typical Turn-Off Delay Time (ns)
21
Typical Turn-On Delay Time (ns)
12
Minimum Operating Temperature (В°C)
-55
Maximum Operating Temperature (В°C)
175
Supplier Temperature Grade
Automotive
Packaging
Tape and Reel
Supplier Package
TDSON EP
Pin Count
8
Mounting
Surface Mount
Package Height
1
Package Length
5.15
Package Width
5.48
PCB changed
8
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