Курс ЦБ на 23.04.2024
$93,25
€99,36
ГлавнаяКаталогDiodes, Transistors and ThyristorsBipolar TransistorsGP BJTMicro Commercial Components 2N5551-AP
Micro Commercial Components 2N5551-AP
артикул 2N5551-AP
Micro Commercial Components
производитель
Trans GP BJT NPN 160V 0.6A 625mW 3-Pin TO-92 Ammo
Datasheet
PDF | 565 кб
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Технические параметры
EU RoHS
Compliant
ECCN (US)
EAR99
Part Status
Obsolete
HTS
8541.29.00.75
Automotive
No
PPAP
No
Type
NPN
Category
Bipolar Power
Configuration
Single
Number of Elements per Chip
1
Maximum Collector Base Voltage (V)
180
Maximum Collector-Emitter Voltage (V)
160
Maximum Emitter Base Voltage (V)
6
Maximum Base Emitter Saturation Voltage (V)
1@5mA@50mA
Maximum Collector-Emitter Saturation Voltage (V)
0.5@5mA@50mA
Maximum DC Collector Current (A)
0.6
Minimum DC Current Gain
80@1mA@5V; 30@50mA@5V; 80@10mA@5V
Maximum Power Dissipation (mW)
625
Maximum Transition Frequency (MHz)
300
Minimum Operating Temperature (В°C)
-55
Maximum Operating Temperature (В°C)
150
Packaging
Ammo
Supplier Package
TO-92
Pin Count
3
Standard Package Name
TO-92
Mounting
Through Hole
Package Height
4.7(Max)
Package Length
4.7(Max)
Package Width
3.68(Max)
PCB changed
3
Lead Shape
Formed
Показать все
Описание
If your circuit&s;s specifications require a device that can handle high levels of voltage, Micro Commercial Components&s; NPN 2N5551-AP general purpose bipolar junction transistor is for you. This bipolar junction transistor&s;s maximum emitter base voltage is 6 V. Its maximum power dissipation is 625 mW. It has a maximum collector emitter voltage of 160 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has a minimum operating temperature of -55 В°C and a maximum of 150 В°C.
