Курс ЦБ на 16.04.2024
$93,59
€99,79
ГлавнаяКаталогDiodes, Transistors and ThyristorsFET TransistorsRF FETsNXP Semiconductors AFT09MS007NT1
NXP Semiconductors AFT09MS007NT1
артикул AFT09MS007NT1
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Технические параметры
EU RoHS
Compliant with Exemption
ECCN (US)
EAR99
Part Status
Active
HTS
8541.29.00.75
SVHC
Yes
SVHC Exceeds Threshold
Yes
Automotive
No
PPAP
No
Configuration
Single
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Mode of Operation
CW
Process Technology
LDMOS
Maximum Drain Source Voltage (V)
30
Maximum Gate Source Voltage (V)
12
Maximum Gate Threshold Voltage (V)
2.6
Maximum VSWR
65
Maximum Gate Source Leakage Current (nA)
1
Maximum IDSS (uA)
10
Typical Input Capacitance @ Vds (pF)
107@7.5V
Typical Reverse Transfer Capacitance @ Vds (pF)
2.7@7.5V
Typical Output Capacitance @ Vds (pF)
56@7.5V
Typical Forward Transconductance (S)
9.8
Maximum Power Dissipation (mW)
182000
Output Power (W)
7.3(Typ)
Typical Power Gain (dB)
15.2(Max)
Maximum Frequency (MHz)
941
Minimum Frequency (MHz)
136
Typical Drain Efficiency (%)
71
Minimum Operating Temperature (В°C)
-65
Maximum Operating Temperature (В°C)
150
Packaging
Tape and Reel
Supplier Package
PLD-1.5W
Pin Count
3
Mounting
Surface Mount
Package Height
1.83(Max)
Package Length
6.73(Max)
Package Width
5.97(Max)
PCB changed
3
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Описание
RF Power Field-Effect Transistor, 1-Element, N-Channel, Metal-oxide Semiconductor FET
FPGA Cyclone Family 12060 Cells 320.1MHz 0.13um (CMOS) Technology 1.5V 256-Pin FBGA
AFT09MSx Series 30 V 870 MHz N-Channel RF Power LDMOS Transistor - PLD-1.5W-2
TRANSISTOR, RF, 30V, PLD-1.5W-2; Drain Source Voltage Vds: 30VDC; Continuous Drain Current Id: -; Power Dissipation Pd: 114W; Operating Frequency Min: 136MHz; Operating Frequency Max: 941MHz; RF Transistor Case: PLD-1.5W; No. of Pins: 2Pins; Operating Temperature Max: 150°C; Product Range: -; MSL: MSL 3 - 168 hours; SVHC: No SVHC (15-Jan-2019)
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