Курс ЦБ на 25.04.2024
$92,51
€98,91
ГлавнаяКаталогDiodes, Transistors and ThyristorsBipolar TransistorsGP BJTON Semiconductor 12A02CH-TL-E
ON Semiconductor 12A02CH-TL-E
артикул 12A02CH-TL-E
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Технические параметры
EU RoHS
Compliant
ECCN (US)
EAR99
Part Status
Obsolete
HTS
8541.21.00.75
Automotive
No
PPAP
No
Type
PNP
Category
Bipolar Small Signal
Material
Si
Configuration
Single
Number of Elements per Chip
1
Maximum Collector Base Voltage (V)
15
Maximum Collector-Emitter Voltage (V)
12
Maximum Emitter Base Voltage (V)
5
Maximum Base Emitter Saturation Voltage (V)
1.2@20mA@400mA
Maximum Collector-Emitter Saturation Voltage (V)
0.24@20mA@400mA
Maximum DC Collector Current (A)
1
Minimum DC Current Gain
300@10mA@2V
Maximum Power Dissipation (mW)
700
Maximum Transition Frequency (MHz)
450(Typ)
Minimum Operating Temperature (В°C)
-55
Maximum Operating Temperature (В°C)
150
Packaging
Tape and Reel
Supplier Package
CPH
Pin Count
3
Standard Package Name
SOT
Mounting
Surface Mount
Package Height
0.9
Package Length
2.9
Package Width
1.6
PCB changed
3
Lead Shape
Gull-wing
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Описание
This specially engineered PNP 12A02CH-TL-E GP BJT from ON Semiconductor comes with a variety of characteristics including absolute maximum ratings, thermal characteristics, and DC and AC electrical characteristics. This bipolar junction transistor&s;s maximum emitter base voltage is 5 V. Its maximum power dissipation is 700 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This bipolar junction transistor has an operating temperature range of -55 В°C to 150 В°C. It has a maximum collector emitter voltage of 12 V and a maximum emitter base voltage of 5 V.
