Курс ЦБ на 16.04.2024
$93,59
€99,79
ГлавнаяКаталогDiodes, Transistors and ThyristorsBipolar TransistorsGP BJTON Semiconductor 12A02MH-TL-E
ON Semiconductor 12A02MH-TL-E
артикул 12A02MH-TL-E
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Технические параметры
EU RoHS
Compliant
ECCN (US)
EAR99
Part Status
Active
HTS
8541.21.00.75
Automotive
No
PPAP
No
Type
PNP
Category
Bipolar Small Signal
Material
Si
Configuration
Single
Number of Elements per Chip
1
Maximum Collector Base Voltage (V)
15
Maximum Collector-Emitter Voltage (V)
12
Maximum Emitter Base Voltage (V)
5
Maximum Base Emitter Saturation Voltage (V)
1.2@20mA@400mA
Maximum Collector-Emitter Saturation Voltage (V)
0.24@20mA@400mA
Maximum DC Collector Current (A)
1
Minimum DC Current Gain
300@10mA@2V
Maximum Power Dissipation (mW)
600
Maximum Transition Frequency (MHz)
450(Typ)
Minimum Operating Temperature (В°C)
-55
Maximum Operating Temperature (В°C)
150
Packaging
Tape and Reel
Supplier Package
MCPH
Pin Count
3
Standard Package Name
SOT
Mounting
Surface Mount
Package Height
0.88(Max)
Package Length
2
Package Width
1.6
PCB changed
3
Lead Shape
Flat
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Описание
Implement this versatile PNP 12A02MH-TL-E GP BJT from ON Semiconductor into an electronic circuit to be used as a current or voltage-controlled switch or amplifier. This bipolar junction transistor&s;s maximum emitter base voltage is 5 V. Its maximum power dissipation is 600 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This bipolar junction transistor has an operating temperature range of -55 В°C to 150 В°C. It has a maximum collector emitter voltage of 12 V and a maximum emitter base voltage of 5 V.
