Курс ЦБ на 25.04.2024
$92,51
€98,91
ГлавнаяКаталогDiodes, Transistors and ThyristorsBipolar TransistorsGP BJTON Semiconductor 15C02CH-TL-E
ON Semiconductor 15C02CH-TL-E
артикул 15C02CH-TL-E
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Технические параметры
EU RoHS
Compliant
ECCN (US)
EAR99
Part Status
Obsolete
HTS
8541.21.00.75
Automotive
No
PPAP
No
Type
NPN
Category
Bipolar Small Signal
Configuration
Single
Number of Elements per Chip
1
Maximum Collector Base Voltage (V)
20
Maximum Collector-Emitter Voltage (V)
15
Maximum Emitter Base Voltage (V)
5
Maximum Base Emitter Saturation Voltage (V)
1.2@20mA@400mA
Maximum Collector-Emitter Saturation Voltage (V)
0.28@20mA@400mA
Maximum DC Collector Current (A)
1
Minimum DC Current Gain
300@50mA@2V
Maximum Power Dissipation (mW)
700
Maximum Transition Frequency (MHz)
440(Typ)
Minimum Operating Temperature (В°C)
-55
Maximum Operating Temperature (В°C)
150
Packaging
Tape and Reel
Pin Count
3
Standard Package Name
SOT
Supplier Package
CPH
Mounting
Surface Mount
Package Height
0.9
Package Length
2.9
Package Width
1.6
PCB changed
3
Lead Shape
Gull-wing
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Описание
The versatility of this NPN 15C02CH-TL-E GP BJT from ON Semiconductor makes it capable of being use as either a switch or amplifier in your circuit. This bipolar junction transistor&s;s maximum emitter base voltage is 5 V. Its maximum power dissipation is 700 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This bipolar junction transistor has an operating temperature range of -55 В°C to 150 В°C. It has a maximum collector emitter voltage of 15 V and a maximum emitter base voltage of 5 V.
