Курс ЦБ на 20.04.2024
$93,44
€99,58
ГлавнаяКаталогDiodes, Transistors and ThyristorsBipolar TransistorsRF BJTON Semiconductor 15GN03CA-TB-E
ON Semiconductor 15GN03CA-TB-E
артикул 15GN03CA-TB-E
ON Semiconductor
производитель
Trans RF BJT NPN 10V 0.07A 200mW 3-Pin SC-59 T/R
Datasheet
PDF | 296 кб
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Технические параметры
EU RoHS
Compliant
ECCN (US)
EAR99
Part Status
Active
Automotive
No
PPAP
No
Type
NPN
Configuration
Single
Number of Elements per Chip
1
Maximum Collector Base Voltage (V)
20
Maximum Collector-Emitter Voltage (V)
10
Maximum Collector-Emitter Voltage Range (V)
&l;20
Maximum Emitter Base Voltage (V)
3
Maximum DC Collector Current (A)
0.07
Maximum DC Collector Current Range (A)
0.06 to 0.12
Maximum Emitter Cut-Off Current (nA)
1000
Maximum Collector Cut-Off Current (nA)
100
Operational Bias Conditions
5V/20mA
Minimum DC Current Gain
100@10mA@5V
Minimum DC Current Gain Range
50 to 120
Typical Output Capacitance (pF)
0.95
Maximum Power Dissipation (mW)
200
Maximum Transition Frequency (MHz)
1500(Typ)
Maximum Noise Figure (dB)
1.6(Typ)
Minimum Operating Temperature (В°C)
-55
Maximum Operating Temperature (В°C)
150
Packaging
Tape and Reel
Supplier Package
SC-59
Pin Count
3
Standard Package Name
SC
Mounting
Surface Mount
Package Height
1.25(Max)
Package Length
3.05(Max)
Package Width
1.65(Max)
PCB changed
3
Lead Shape
Gull-wing
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Описание
If you are dealing with high radio frequency input power, ON Semiconductor&s;s 15GN03CA-TB-E RF bi-polar junction transistor is for you. This RF transistor has an operating temperature range of -55 В°C to 150 В°C.
