Курс ЦБ на 20.04.2024
$93,44
€99,58
ROHM RGT16NS65DGTL
артикул RGT16NS65DGTL
ROHM
производитель
Trans IGBT Chip N-CH 650V 16A 94000mW 3-Pin(2+Tab) LPDS T/R
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Технические параметры
Technical
Collector Emitter Breakdown Voltage
650 V
Collector Emitter Saturation Voltage
1.65 V
Collector Emitter Voltage (VCEO)
650 V
Continuous Collector Current
8 A
Element Configuration
Single
Max Breakdown Voltage
650 V
Max Collector Current
16 A
Max Operating Temperature
175 °C
Max Power Dissipation
94 W
Min Operating Temperature
-40 °C
Packaging
Tape & Reel (TR)
Reverse Recovery Time
42 ns
Physical
Case/Package
TO-263-3
Mount
Surface Mount
Number of Pins
3
Compliance
REACH SVHC
Unknown
RoHS
Compliant
Supply Chain
Lifecycle Status
Production (Last Updated: 2 years ago)
Показать все
Описание
Trans IGBT Chip N-CH 650V 16A 94000mW 3-Pin(2+Tab) LPDS T/R
IGBT, SINGLE, 650V, 16A, TO-263S-3
IGBT TRENCH FIELD 650V 16A LPDS
French Electronic Distributor since 1988
IGBT, SINGLE, 650V, 16A, TO-263S-3; DC Collector Current: 16A; Collector Emitter Saturation Voltage Vce(on): 1.65V; Power Dissipation Pd: 94W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-263S; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018)
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