Курс ЦБ на 20.04.2024
$93,44
€99,58
STMicroelectronics BU508AW
артикул BU508AW
STMicroelectronics
производитель
Trans GP BJT NPN 700V 8A 125000mW 3-Pin(3+Tab) TO-247 Tube
Datasheet
PDF | 201 кб
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Технические параметры
EU RoHS
Compliant with Exemption
ECCN (US)
EAR99
Part Status
Active
HTS
8541.29.00.95
SVHC
Yes
SVHC Exceeds Threshold
Yes
Automotive
No
PPAP
No
Type
NPN
Category
Bipolar Power
Configuration
Single
Number of Elements per Chip
1
Maximum Collector-Emitter Voltage (V)
700
Maximum Emitter Base Voltage (V)
9
Maximum Base Emitter Saturation Voltage (V)
1.1@2A@4.5A
Maximum Collector-Emitter Saturation Voltage (V)
1@1.6A@4.5A
Maximum DC Collector Current (A)
8
Minimum DC Current Gain
10@0.1A@5V; 5@4.5A@5V
Maximum Power Dissipation (mW)
125000
Minimum Operating Temperature (В°C)
-65
Maximum Operating Temperature (В°C)
150
Packaging
Tube
Supplier Package
TO-247
Pin Count
3
Standard Package Name
TO-247
Mounting
Through Hole
Package Height
20.15(Max)
Package Length
15.75(Max)
Package Width
5.15(Max)
PCB changed
3
Tab
Tab
Lead Shape
Through Hole
Показать все
Описание
Implement this versatile NPN BU508AW GP BJT from STMicroelectronics into an electronic circuit to be used as a current or voltage-controlled switch or amplifier. This bipolar junction transistor&s;s maximum emitter base voltage is 9 V. Its maximum power dissipation is 125000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It has a maximum collector emitter voltage of 700 V and a maximum emitter base voltage of 9 V. This bipolar junction transistor has an operating temperature range of -65 В°C to 150 В°C.
