Курс ЦБ на 18.04.2024
$94,32
€100,28
ГлавнаяКаталогDiodes, Transistors and ThyristorsFET TransistorsMOSFETsTexas Instruments CSD18563Q5AT
Texas Instruments CSD18563Q5AT
артикул CSD18563Q5AT
Texas Instruments
производитель
Trans MOSFET N-CH Si 60V 100A 8-Pin VSONP EP T/R
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Технические параметры
EU RoHS
Compliant with Exemption
ECCN (US)
EAR99
Part Status
Active
HTS
8541.29.00.95
SVHC
Yes
SVHC Exceeds Threshold
Yes
Automotive
No
PPAP
No
Category
Power MOSFET
Material
Si
Configuration
Single Quad Drain Triple Source
Process Technology
NexFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain Source Voltage (V)
60
Maximum Gate Source Voltage (V)
В±20
Maximum Gate Threshold Voltage (V)
2.4
Maximum Continuous Drain Current (A)
100
Maximum Gate Source Leakage Current (nA)
100
Maximum IDSS (uA)
1
Maximum Drain Source Resistance (mOhm)
6.8@10V
Typical Gate Charge @ Vgs (nC)
15@10V; 7.3@4.5V
Typical Gate Charge @ 10V (nC)
15
Typical Input Capacitance @ Vds (pF)
1150@30V
Maximum Power Dissipation (mW)
3200
Typical Fall Time (ns)
1.7
Typical Rise Time (ns)
6.3
Typical Turn-Off Delay Time (ns)
11.4
Typical Turn-On Delay Time (ns)
3.2
Minimum Operating Temperature (В°C)
-55
Maximum Operating Temperature (В°C)
150
Packaging
Tape and Reel
Supplier Package
VSONP EP
Pin Count
8
Standard Package Name
SON
Mounting
Surface Mount
Package Height
1
Package Length
4.9
Package Width
5.75
PCB changed
8
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Описание
Increase the current or voltage in your circuit with this CSD18563Q5AT power MOSFET from Texas Instruments. Its maximum power dissipation is 3200 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This N channel MOSFET transistor operates in enhancement mode. This device is made with nexfet technology. This MOSFET transistor has a minimum operating temperature of -55 В°C and a maximum of 150 В°C.
