Phototransistor IR Chip Silicon 800nm 2-Pin / Phototransistor
PHOTOTRANSISTOR, SIDE VIEW; Transistor Type:Phototransistor; Half Angle:13°; Wavelength, Spectral Response Peak:800nm; Case Style:Radial; Nom Sensitivity @ mW/cm2:1.7mA@1mW/cm2; Current, Ic Typ:1.7mA; Rise Time:3µs; Operating ;RoHS Compliant: Yes
PHOTOTRANSISTOR, SIDE VIEW; Wavelength Typ: 800nm; Viewing Angle: -; Power Consumption: 75mW; No. of Pins: 2Pins; Transistor Case Style: Side Looking; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2019); Angle of Half Sensitivity ±: 13°; Collector Emitter Saturation Voltage Vce(on): 0.4V; Continuous Collector Current Ic Max: 6mA; Current Ic Typ: 1.7mA; Dark Current: 100nA; External Depth: 2.8mm; External Length / Height: 4mm; External Width: 3mm; Fall Time tf: 3.5µs; Lead Diameter: 0.4mm; Lead Length: 17.5mm; Lead Spacing: 2.54mm; Nom Sensitivity @ mW/cm²: 1.7mA @ 1mW/cm²; Operating Temperature Max: 85°C; Operating Temperature Min: -25°C; Operating Temperature Range: -25°C to +85°C; Peak Spectral Response Wavelength: 800nm; Peak Wavelength: 800nm; Reverse Protection Voltage: 6V; Rise Time: 3µs; Storage Temperature Max: 85°C; Storage Temperature Min: -40°C; Transistor Polarity: NPN; Transistor Type: Photo