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Курс ЦБ на 02.05.2024
$91,78
€98,03

Sharp PT480E00000F

артикул PT480E00000F
Sharp
производитель
Phototransistor IR Chip Silicon 800nm 2-Pin / Phototransistor
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Технические параметры
Technical
Collector Emitter Breakdown Voltage
35 V
Collector Emitter Voltage (VCEO)
6 V
Dark Current
100 µA
Fall Time
3.5 µs
Lens Style
Domed
Max Collector Current
20 mA
Max Operating Temperature
85 °C
Max Power Dissipation
75 mW
Min Operating Temperature
-25 °C
Number of Elements
1
Orientation
Side View
Output Current
20 mA
Peak Wavelength
800 nm
Polarity
NPN
Power Consumption
75 mW
Power Dissipation
75 mW
Rise Time
3 µs
Viewing Angle
70 °
Wavelength
800 nm
Physical
Case/Package
Radial
Lens Color
Clear
Mount
Through Hole
Number of Pins
2
Dimensions
Lead Length
17.5 mm
Width
3 mm
Compliance
Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
Unknown
RoHS
Compliant
Описание

Phototransistor IR Chip Silicon 800nm 2-Pin / Phototransistor

PHOTOTRANSISTOR, SIDE VIEW; Transistor Type:Phototransistor; Half Angle:13°; Wavelength, Spectral Response Peak:800nm; Case Style:Radial; Nom Sensitivity @ mW/cm2:1.7mA@1mW/cm2; Current, Ic Typ:1.7mA; Rise Time:3µs; Operating ;RoHS Compliant: Yes

PHOTOTRANSISTOR, SIDE VIEW; Wavelength Typ: 800nm; Viewing Angle: -; Power Consumption: 75mW; No. of Pins: 2Pins; Transistor Case Style: Side Looking; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2019); Angle of Half Sensitivity ±: 13°; Collector Emitter Saturation Voltage Vce(on): 0.4V; Continuous Collector Current Ic Max: 6mA; Current Ic Typ: 1.7mA; Dark Current: 100nA; External Depth: 2.8mm; External Length / Height: 4mm; External Width: 3mm; Fall Time tf: 3.5µs; Lead Diameter: 0.4mm; Lead Length: 17.5mm; Lead Spacing: 2.54mm; Nom Sensitivity @ mW/cm²: 1.7mA @ 1mW/cm²; Operating Temperature Max: 85°C; Operating Temperature Min: -25°C; Operating Temperature Range: -25°C to +85°C; Peak Spectral Response Wavelength: 800nm; Peak Wavelength: 800nm; Reverse Protection Voltage: 6V; Rise Time: 3µs; Storage Temperature Max: 85°C; Storage Temperature Min: -40°C; Transistor Polarity: NPN; Transistor Type: Photo

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