Курс ЦБ на 04.05.2024
$91,69
€98,56
Analog Devices HMC606LC5TR
артикул HMC606LC5TR
Analog Devices
производитель
RF Amplifier WBand lo Phase Noise amp SMT 2 - 18 GHz
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Технические параметры
Technical
Bandwidth
16 GHz
Frequency
18 GHz
Gain
12.5 dB
Max Frequency
18 GHz
Max Junction Temperature (Tj)
175 °C
Max Operating Temperature
85 °C
Max Power Dissipation
978 mW
Max Supply Voltage
5.5 V
Min Operating Temperature
-55 °C
Min Supply Voltage
4.5 V
Noise Figure
5 dB
Number of Channels
1
Operating Supply Current
64 mA
Operating Supply Voltage
5 V
P1dB
13 dBm
Packaging
Tape & Reel (TR)
Schedule B
8542330000, 8542330000; 8542330000
Physical
Case/Package
QFN
Contact Plating
Gold
Mount
Surface Mount
Number of Pins
32
Dimensions
Height
1.1 mm
Compliance
RoHS
Compliant
Supply Chain
Lifecycle Status
Production (Last Updated: 2 weeks ago)
Manufacturer Lifecycle Status
PRODUCTION (Last Updated: 2 weeks ago)
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Описание
RF Amplifier WBand lo Phase Noise amp SMT 2 - 18 GHz
RF Amp Chip Single GP 18000MHz 7V 32-Pin QFN T/R
GaAs, InGaP, HBT, MMIC, Ultralow Phase Noise, Distributed Amplifier, 2 GHz to 18 GHz
Wide Band Low Power Amplifier, 2000MHz Min, 18000MHz Max, 1 Func, GAAS
Rf Amplifier, Lcc-32, -40 To 85Deg C; Frequency Min:2Ghz; Frequency Max:18Ghz; Gain:13.5Db; Noise Figure Typ:7Db; Rf Ic Case Style:lcc; No. Of Pins:32Pins; Supply Voltage Min:4.5V; Supply Voltage Max:5.5V; Product Range:- Rohs Compliant: Yes
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